施路平
教授、特聘研究員(yuán)
Email：shiluping@@gdiist.cn
個人簡介：
1992年于德國科隆大(dà)學取得博士學位。在新加坡科技局數據存儲研究院工(gōng)作期間曆任：人工(gōng)認知(zhī)存儲器實驗室主任；光學材料和系統實驗室主任；非易失性存儲器實驗室主任。2013年加入清華大(dà)學至今，任光盤國家工(gōng)程研究中(zhōng)心主任，清華大(dà)學類腦計算研究中(zhōng)心主任；國際光學工(gōng)程學會（SPIE）會士，國際認知(zhī)信息和認知(zhī)計算協會（I2CICC）會士。
研究領域：類腦計算、信息存儲、集成光電(diàn)子、智能系統和儀器。
代表性著作：
1. Pei, J.; Deng, L.; Song, S.; Zhao, M.; Zhang, Y.; Wu, S.; Wang, G.; Zou, Z.; Wu, Z.; He, W.; Chen, F.; Deng, N.; Wu, S.; Wang, Y.; Wu, Y.; Yang, Z.; Ma, C.; Li, G.; Han, W.; Li, H.; Wu, H.; Zhao, R.; Xie, Y.; and Shi, LP* (2019). Towards artificial general intelligence with hybrid Tianjic chip architecture, Nature, 572(7767): 106-111. (封面文章)
2. Zhang, Y*.; Qu, P.; Ji, Y.; Zhang, W.; Gao, G.; Wang, G.; Song, S.; Li, G.; Chen, W.; Zheng, W.; Chen, F.; Pei, J.; Zhao, R.; Zhao, M.; and Shi, LP* (2020). A system hierarchy for brain-inspired computing, Nature, 586(7829): 378-384.
3. Loke, D., Lee, T. H., Wang, W. J., Shi, L. P., * Zhao, R., Yeo, Y. C., Chong, T.C, Elliott, S. R. * (2012). Breaking the speed limits of phase-change memory. Science, 336(6088), 1566-1569.
4. Ma, S., Pei, J., Zhang, W., Wang, G., Feng, D., Yu, F., ... & Shi, LP*. (2022). Neuromorphic computing chip with spatiotemporal elasticity for multi-intelligent-tasking robots. Science Robotics, 7(67), eabk2948
5. Zhao, R., Yang, Z., Zheng, H., Wu, Y., Liu, F., Wu, Z., ... & Shi, LP*. (2022). A framework for the general design and computation of hybrid neural networks. Nature Communications, 13(1), 1-12.
6. Wu, Y., Zhao, R., Zhu, J., Chen, F., Xu, M., Li, G., ... & Shi, LP*. (2022). Brain-inspired global-local learning incorporated with neuromorphic computing. Nature Communications, 13(1), 1-14.
7. Lim, D. H., Wu, S., Zhao, R., Lee, J. H., Jeong, H., & Shi, LP*. (2021). Spontaneous sparse learning for PCM-based memristor neural networks. Nature communications, 12(1), 1-14.
8. Shi, L., Pei, J., Deng, N., Wang, D., Deng, L., Wang, Y., ... & Ma, C. (2015, December). Development of a neuromorphic computing system. In 2015 IEEE international electron devices meeting (IEDM) (pp. 4-3).
